Multi Gate Transistors Modelling
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Follow on Instagram for UpdatesMulti Gate Transistors Modelling Syllabus — Unit-wise Content
The official GTU curriculum for Multi Gate Transistors Modelling (subject code ME02096011) as prescribed for EACD · Semester 2 divides the course into 6 units, covering 27 listed topics. The unit-wise breakdown below is read from the GTU syllabus document for this subject code, so you can check what the course actually covers before deciding which papers to attempt.
Download the official syllabus PDF (ME02096011)Unit 1 Introduction
- Fin Field-Effect transistor
- overview of MOSFET devices for integrated circuit manufacturing
- alternative device concepts
- FinFET devices for VLSI circuits and systems
- history of FinFET devices
Unit 2 Multiple-Gate Metal-Oxide-Semiconductor (MOS) System
- multigate MOS capacitors at equilibrium
- oxide charges
- MOS capacitors under applied bias
- multigate MOS capacitor systems: mathematical analysis
- quantum mechanical effect
Unit 3 Overview of FinFET Device Technology
- FinFET manufacturing technology
- Bulk-FinFET fabrication
- SOI-FinFET process flow
Unit 4 Large Geometry FinFET Device Operation
- basic features of FinFET devices
- FinFET device operation
- drain current formulation
Unit 5 Small Geometry FinFETs
- Physical Effects on Device Performance: Introduction
- short-channel effects on threshold voltage
- quantum mechanical effects
- surface mobility
- high field effects
- output resistances
Unit 6 Leakage Currents in FinFETs
- sub-threshold leakage currents
- gate-induced drain and source leakage currents
- Impact ionization current
- source-drain pn-junction leakage current
- gate oxide tunneling leakage currents. 08 20
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