VLSI Technology

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VLSI TECHNOLOGY ME01096021
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Code: ME01096021 Credits: 4 Semester 1 EACD

VLSI Technology

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VLSI Technology Syllabus — Unit-wise Content

The official GTU curriculum for VLSI Technology (subject code ME01096021) as prescribed for EACD · Semester 1 divides the course into 4 units, covering 44 listed topics. The unit-wise breakdown below is read from the GTU syllabus document for this subject code, so you can check what the course actually covers before deciding which papers to attempt.

Download the official syllabus PDF (ME01096021)

Unit 1 Crystal Growth, Wafer Preparation, Epitaxy and Oxidation

10 lecture hours

  • Electronic Grade Silicon
  • Czochralski crystal growing
  • Silicon Shaping
  • processing considerations and future trends
  • Vapor phase Epitaxy
  • Molecular Beam Epitaxy
  • Silicon on Insulators
  • Epitaxial Evaluation and future trends
  • Growth Mechanism and kinetics
  • Thin Oxides
  • Oxidation Techniques and Systems
  • Oxide properties
  • Redistribution of Dopants at interface
  • Oxidation of Poly Silicon
  • Program Name: Master of Engineering Level: PG Branch: Electronics And Communication (VLSI Design) Subject Code: ME01096021 Subject Name: VLSI Technology Oxidation inducted Defects

Unit 2 Lithography and Relative Plasma Etching

10 lecture hours

  • Optical Lithography
  • Electron Lithography
  • X-Ray Lithography
  • Ion Lithography
  • Plasma properties
  • Feature Size control and Anisotropic Etch mechanism
  • Reactive Plasma Etching techniques and Equipment
  • Specific etch processes and future trends

Unit 3 Deposition, Diffusion, Ion Implantation and Metallization

10 lecture hours

  • Deposition process
  • Poly silicon
  • plasma assisted Deposition
  • Models of Diffusion in Solids
  • Fick’s one dimensional Diffusion Equations
  • Atomic Diffusion Mechanism
  • Measurement techniques
  • Range theory
  • Implant equipment
  • Annealing Shallow junctions
  • High-energy implantation
  • Physical vapor deposition
  • Patterning and future trends

Unit 4 Process Simulation and VLSI Process Integration

42 lecture hours

  • Ion implantation
  • Diffusion and oxidation
  • Etching and Deposition
  • NMOS IC Technology
  • CMOS IC Technology
  • MOS Memory IC technology
  • Bipolar IC Technology
  • IC Fabrication and future trends. 12 25

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