MOSFET Modelling for VLSI Circuits
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Follow on Instagram for UpdatesMOSFET Modelling for VLSI Circuits Syllabus — Unit-wise Content
The official GTU curriculum for MOSFET Modelling for VLSI Circuits (subject code ME01000361) as prescribed for VD · Semester 1 divides the course into 7 units, covering 35 listed topics. The unit-wise breakdown below is read from the GTU syllabus document for this subject code, so you can check what the course actually covers before deciding which papers to attempt.
Download the official syllabus PDF (ME01000361)Unit 1 Introduction of MOSFET modeling
- Circuit Design with MOSFETs
- MOSFET Modeling
- Model Parameter Determination
- Interconnect Modeling
Unit 2 Basic of Semiconductor and pn Junction Theory
- Energy Band Model
- Intrinsic Semiconductor
- Extrinsic or Doped Semiconductor
- Electrical Conduction
- PN Junction at Equilibrium
- Diode Current- Voltage Characteristics
Unit 3 MOS Transistor Structure and Operation
- MOSFET Structure
- MOSFET Characteristics
- MOSFET Scaling
- Hot-Carrier Effects
- VLSI Device Structures
- MOSFET Parasitic Elements
- effective or Electrical Channel Width
Unit 4 MOS Capacitor
- MOS Capacitor with No Applied Voltage
- MOS Capacitor at Non-Zero Bias
- Capacitance of MOS Structures
Unit 5 Threshold Voltage
- MOSFET with Uniformly Doped Substrate
- Non- uniformly Doped MOSFET
- Threshold Voltage Variations with Device Length and Width
- Short-Channel Effect
- Narrow-Width Effect
- Drain Induced Barrier Lowering (DIBL) Effect
- Small- Geometry Effect
Unit 6 SPICE Diode and MOSFET Models and Their Parameters
- Diode Model
- MOSFET Level 1 DC Model
- Level 1 Capacitance Model
- MOSFET Level 2 DC Model
- Level 2 Capacitance Model
- MOSFET BSIM Model
Unit 7 Advance MOSFET Models
- Double gate MOSFET
- FINFET and Gate All Around MOSFETs. 6 10
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