MOSFET Modeling for VLSI Circuits
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MOSFET Modeling for VLSI Circuits Syllabus — Unit-wise Content
The official GTU curriculum for MOSFET Modeling for VLSI Circuits (subject code 3716301) as prescribed for VD · Semester 1 divides the course into 5 units, covering 28 listed topics. The unit-wise breakdown below is read from the GTU syllabus document for this subject code, so you can check what the course actually covers before deciding which papers to attempt.
Download the official syllabus PDF (3716301)Unit 1 Introduction of MOSFET modeling
- Circuit Design with MOSFETs
- MOSFET Modeling
- Model Parameter Determination
- Interconnect Modeling. 4 10
Unit 2 Basic of Semiconductor and pn Junction Theory
- Energy Band Model
- Intrinsic Semiconductor
- Extrinsic or Doped Semiconductor
- Electrical Conduction
- PN Junction at Equilibrium
- Diode Current-Voltage Characteristics
Unit 3 MOS Transistor Structure and Operation
- MOSFET Structure
- MOSFET Characteristics
- MOSFET Scaling
- Hot-Carrier Effects
- VLSI Device Structures
- MOSFET Parasitic Elements
- effective or Electrical Channel Width
Unit 4 MOS Capacitor
- MOS Capacitor with No Applied Voltage
- MOS Capacitor at Non-Zero Bias
- Capacitance of MOS Structures
Unit 5 Threshold Voltage
- MOSFET with Uniformly Doped Substrate
- Non-uniformly Doped MOSFET
- Threshold Voltage Variations with Device Length and Width
- Short-Channel Effect
- Narrow-Width Effect
- Drain Induced Barrier Lowering (DIBL) Effect
- Small-Geometry Effect
- Subject Code : 3716301 Subject Name : MOSFET Modeling for VLSI Circuits
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