Unit 1 Introduction

• Overview of memory technologies
• Memory organization
• trends and technologies. 4 5 Mainstream Semiconductor Memory Technologies : A
• Volatile Memories :

Unit 2 Static Random Access Memory (SRAM)

9 lecture hours

• SRAM Cell Structures
• MOS SRAM Architecture
• 6-T MOS SRAM Cell
• CMOS SRAM Cell Design Strategy
• Noise margin
• Scaling issues Read and Write circuitry
• Sense amplifier
• Advanced SRAMArchitectures
• Application Specific SRAMs

Unit 3 Dynamic Random Access Memory (DRAM)

8 lecture hours

• 3-T DRAM operation
• Read-Write Circuits
• 1T-1C DRAM Cell Fabrication technology and capacitor structure
• Soft Error Failures in DRAMsAdvanced DRAM Designs and Architecture-Application Specific DRAMs
• Non-volatile Memories :

Unit 4 Masked ROMs, CMOS PROM, EEPROMs, Floating Gate EPROM

8 lecture hours

• Flash Memories: NAND v/s NOR architecture
• Scaling, and Multi-Level Cell capability (MLC)
• Advanced Flash Memory Architectures Emerging Memory Technologies :

Unit 5 Resistive RAM (RRAM), Phase Change Memory (PCM), Ferroelectric

7 lecture hours

• RAM (FeRAM)
• Conductive Bridge RAM (CBRAM)
• Magneto- resistive RAMs: Spin-Transfer Torque MRAM (STT-MRAM) and Spin-Orbit Torque MRAM (SOT-MRAM)
• Comparative analysis of all eNVMs
• Unconventional Applications of eNVMs: Neuromorphic Computing
• Computing-inMemory (CiM)
• Memory Hybrids (2D & 3D)
• Memory Stacks
• Memory Testing and Reliability Issues
• High Density Memory Packaging 9 25 Memory Fault Modeling and Design for Testability : RAM Fault Modeling
• Electrical Testing
• Pseudo Random Testing
• Megabit DRAM Testing
• Nonvolatile Memory Modeling and Testing
• IDDQ Fault Modeling and Testing
• Memory Built-In Self -Test (MBIST)