VLSI Fabrication Technology

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VLSI FABRICATION TECHNOLOGY ME02000151
FREE PDF ME02000151
Code: ME02000151 Credits: 4 Semester 2 EAC(

VLSI Fabrication Technology

Get the full GTU study material, English & Gujarati textbook PDFs, syllabus curriculum, and solved previous year question papers.

VLSI Fabrication Technology Syllabus — Unit-wise Content

The official GTU curriculum for VLSI Fabrication Technology (subject code ME02000151) as prescribed for EAC( · Semester 2 divides the course into 5 units, covering 49 listed topics. The unit-wise breakdown below is read from the GTU syllabus document for this subject code, so you can check what the course actually covers before deciding which papers to attempt.

Download the official syllabus PDF (ME02000151)

Unit 1 Crystal Growth, Wafer Preparation, Epitaxy and Oxidation

10 lecture hours

  • Electronic Grade Silicon
  • Czochralski crystal growing
  • Silicon Shaping
  • processing considerations and future trends
  • Vapor phase Epitaxy
  • Molecular Beam Epitaxy
  • Silicon on Insulators
  • Epitaxial Evaluation and future trends
  • Growth Mechanism and kinetics
  • Thin Oxides
  • Oxidation Techniques and Systems
  • Oxide properties
  • Redistribution of Dopants at interface
  • Oxidation of Poly Silicon
  • Oxidation inducted Defects

Unit 2 Lithography and Relative Plasma Etching

10 lecture hours

  • Optical Lithography
  • Electron Lithography
  • X-Ray Lithography
  • Ion Lithography
  • Plasma properties
  • Feature Size control and Anisotropic Etch mechanism
  • Reactive Plasma Etching techniques and Equipment
  • Specific etch processes and future trends

Unit 3 Deposition, Diffusion, Ion Implementation and Metallization

12 lecture hours

  • Deposition process
  • Poly silicon
  • plasma assisted Deposition
  • Models of Diffusion in Solids
  • Fick’s one dimensional Diffusion Equations
  • Atomic Diffusion Mechanism
  • Measurement techniques
  • Range theory
  • Implant equipment
  • Annealing Shallow junctions
  • High-energy implantation
  • Physical vapor deposition
  • Patterning and future trends

Unit 4 Process Simulation and VLSI Process Integration

10 lecture hours

  • Ion implantation
  • Diffusion and oxidation
  • Etching and Deposition
  • NMOS IC Technology
  • CMOS IC Technology
  • MOS Memory IC technology
  • Bipolar IC Technology
  • IC Fabrication and future trends

Unit 5 Yield and Reliability Analysis

5 lecture hours

  • Mechanisms and modelling of Yield loss in VLSI
  • Reliability requirement in VLSI
  • Failure distributions
  • accelerated testing
  • Failure mechanisms

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