Physics of MOS Transistor
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Physics of MOS Transistor Syllabus — Unit-wise Content
The official GTU curriculum for Physics of MOS Transistor (subject code 3712605) as prescribed for EAC( · Semester 1 divides the course into 6 units, covering 41 listed topics. The unit-wise breakdown below is read from the GTU syllabus document for this subject code, so you can check what the course actually covers before deciding which papers to attempt.
Download the official syllabus PDF (3712605)Unit 1 Semiconductors, Junctions, and MOSFET Overview
- Contact Potentials
- pn junction
- Overview of MOS Transistor
Unit 2 Two-Terminal MOS Structure
- Flat-band voltage
- Potential and Charge balance
- Effect of Gate-Substrate Voltage on Surface Condition
- Regions of Inversion and Analysis
- Small-Signal Capacitances
Unit 3 Three-Terminal MOS Structure
- Contacting the Inversion layer
- Body effect
- Regions of Inversion and Mathematical Analysis
- Study of MOS Structure from “VCB” Control Point of View
Unit 4 Four-Terminal MOS Structure
- Transistor Regions of Operation
- General Charge Sheet Models
- Strong Inversion
- Weak Inversion
- Moderate Inversion
- Interpolation Models
- Source Referenced versus Body Referenced Modeling
- Effective Mobility
- Temperature Effects
- p-channel MOS Transistor
- Enhancement-Mode and Depletion-Mode Transistors
- Model Parameter Values
- Model Accuracy
- Model Comparison
Unit 5 Small-Dimension Effects
- Channel Length Modulation
- Barrier Lowering
- Two- Dimensional Charge Sharing
- Threshold Voltage
- Carrier Velocity Saturation
- Hot Carrier Effects
- Effects of Surface and Drain Series Resistances
- Effects due to Thin Oxides and High Doping
Unit 6 MOSFET Modeling for Circuit Simulation
- Types of Models
- Combining Several Effects into One Physical Model
- Parameter Extraction
- Properties of Good Models
- General Considerations
- Benchmark Tests
- Nontechnical Considerations
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