Elements of Power Electronics
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Follow on Instagram for UpdatesElements of Power Electronics Syllabus — Unit-wise Content
The official GTU curriculum for Elements of Power Electronics (subject code DI03024041) as prescribed for AI & DS · Semester 3 divides the course into 5 units, covering 56 listed topics. The unit-wise breakdown below is read from the GTU syllabus document for this subject code, so you can check what the course actually covers before deciding which papers to attempt.
Download the official syllabus PDF (DI03024041)Unit 1 Fundamentals of Power semiconductor Devices
- 1.1 Introduction to power electronics
- History of Power Electronics Development. 1.2 Applications of power electronics: Power electronics in Information technology
- robotics and flexible production
- role of power electronics in providing sustainable electric energy- Energy conversation
- Electric-Motor Driven Systems
- Renewable Energy and Utility Applications of Power Electronics 1.3 Semiconductor devices: Diode
- Thyristor family (DIAC, SCR, LASCR
- ASCR, RCT, GTO, SITH, MCT, TRIAC, SCS, SUS, SBS)
- Transistor family (BJT
- IGBT, SIT, PUT, UJT)- symbol
- maximum ratings. 1.4 Recent and potential advancements in power electronics devices. 1.5 Power electronic converters: AC-DC
- AC-AC converters with their applications
Unit 2 Thyristor Family
- 2.1 SCR: Construction
- Principle of operation
- disadvantages applications. 2.2 GTO: Structure
- turn on and turn off process
- disadvantages applications. 2.3 DIAC: Schematic diagram
- characteristics and applications. 2.4 TRIAC: Structure
- SCR Equivalent circuit
- mode of turn on process
- disadvantages applications. 2.5 MCT: features
- Basic structure
- advantages- disadvantages
- disadvantages applications. 2.6 Compare various Thyristors
- Program Name: Engineering Level: Diploma Branch: Power Electronics Course / Subject Code: DI03024041 Course / Subject Name: Elements of Power Electronics
Unit 3 Power Transistor Family
- 3.1 Power BJT: function as a switch – cut off mode and saturation mode. 3.2 Power MOSFET: Types (enhancement mode- P-channel
- basic structure
- characteristics (I-V and transfer) as an ideal and real switch
- disadvantages applications. 3.3 IGBT: Basic structure
- disadvantages applications. 3.4 Compare various transistors
Unit 4 Control circuits for Power semiconductor devices
- 4.1 Pulse transformer connections for two SCRs 4.2 Commonly used optoisolators
- advantages and applications. 4.3 UJT: structure
- equivalent circuit
- normal UJT biasing
- applications. 4.4 Turn on methods: Gate triggering: Resistive, RC, Pulse triggering using UJT (ramp triggering) 4.5 Gate-drive circuit of a GTO for turn-on and turn-off using BJT. 4.6 TRIAC gate circuit using DIAC. 4.7 Triggering circuit for BJT/MOSFET/TRIAC using optoisolators (optocoupler)
- Triggering circuit for BJT/MOSFET/TRIAC using TCA 785 IC
Unit 5 Power semiconductor switches protection and ratings. 5.1 SCR Protection
- Power circuit: di/dt
- over current
- over voltage
- snubber circuit
- Gate circuit: Gate circuit protection using Zener diode. 5.2 MOSFET Protection: overvoltage
- Gate protection. 5.3 Thyristor ratings: Voltage ratings: Peak working forward-blocking voltage (VDWM)
- Peak repetitive forward blocking voltage (VDRM)
- Peak working reverse voltage (VRWM)
- Peak repetitive reverse Program Name: Engineering Level: Diploma Branch: Power Electronics Course / Subject Code: DI03024041 Course / Subject Name: Elements of Power Electronics voltage (VRRM)
- Voltage safety factor
- finger voltage
- on state voltage drop
- Current ratings: Average On-State current
- RMS On-State current
- holding and lathing current. 5.4 MOSFET ratings: Breakdown voltage
- maximum on state voltage
- Maximum Gate voltage
- maximum continuous current
- switching time and average power dissipation
- on state resistance
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