VLSI Technology
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Follow on Instagram for UpdatesVLSI Technology Syllabus — Unit-wise Content
The official GTU curriculum for VLSI Technology (subject code 3735408) as prescribed for EAC( · Semester 3 divides the course into 4 units, covering 43 listed topics. The unit-wise breakdown below is read from the GTU syllabus document for this subject code, so you can check what the course actually covers before deciding which papers to attempt.
Download the official syllabus PDF (3735408)Unit 1 Crystal Growth, Wafer Preparation, Epitaxy and Oxidation
- Electronic Grade Silicon
- Czochralski crystal growing
- Silicon Shaping
- processing considerations and future trends
- Vapor phase Epitaxy
- Molecular Beam Epitaxy
- Silicon on Insulators
- Epitaxial Evaluation and future trends
- Growth Mechanism and kinetics
- Thin Oxides
- Oxidation Techniques and Systems
- Oxide properties
- Redistribution of Dopants at interface
- Oxidation of Poly Silicon
- Oxidation inducted Defects
Unit 2 Lithography and Relative Plasma Etching
- Optical Lithography
- Electron Lithography
- X-Ray Lithography
- Ion Lithography
- Plasma properties
- Feature Size control and Anisotropic Etch mechanism
- Reactive Plasma Etching techniques and Equipment
- Specific etch processes and future trends
Unit 3 Deposition, Diffusion, Ion Implementation and Metallization
- Deposition process
- Poly silicon
- plasma assisted Deposition
- Models of Diffusion in Solids
- Fick’s one dimensional Diffusion Equations
- Atomic Diffusion Mechanism
- Measurement techniques
- Range theory
- Implant equipment
- Annealing Shallow junctions
- High-energy implantation
- Physical vapor deposition
- Patterning and future trends
Unit 4 Process Simulation and VLSI Process Integration
- Ion implantation
- Diffusion and oxidation
- Etching and Deposition
- NMOS IC Technology
- CMOS IC Technology
- MOS Memory IC technology
- Bipolar IC 8 Subject Code: 3735408 w.e.f
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