Memory Technologies
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Follow on Instagram for UpdatesMemory Technologies Syllabus — Unit-wise Content
The official GTU curriculum for Memory Technologies (subject code 3715412) as prescribed for EAC( · Semester 1 divides the course into 6 units, covering 35 listed topics. The unit-wise breakdown below is read from the GTU syllabus document for this subject code, so you can check what the course actually covers before deciding which papers to attempt.
Download the official syllabus PDF (3715412)Unit 1 Random Access Memory Technologies
- Static Random Access Memories (SRAMs)
- SRAM Cell Structures
- MOS SRAM Architecture
- MOS SRAM Cell and Peripheral Circuit
- Bipolar SRAM
- Advanced SRAM Architectures
- Application Specific SRAMs
Unit 2 Dynamic RAM
- MOS DRAM Cell
- BiCMOS DRAM
- Error Failures in DRAM
- Advanced DRAM Design and Architecture
- Application Specific DRAMs.SRAM and DRAM Memory controllers
Unit 3 Non-Volatile Memories
- Masked ROMs
- Bipolar & CMOS PROM
- Floating Gate EPROM Cell
- OTP EPROM
- Non-volatile SRAM
- Flash Memories
Unit 4 Semiconductor Memory Reliability and Radiation Effects
- General Reliability Issues
- RAM Failure Modes and Mechanism
- Nonvolatile Memory
- Radiation Effects, SEP, Radiation Hardening Techniques
- Process and Design Issues
- Radiation Hardened Memory Characteristics
- Radiation Hardness Assurance and Testing
Unit 5 Advanced Memory Technologies and High-density Memory Packing Technologies
- Ferroelectric Random Access Memories (FRAMs)
- Gallium Arsenide (GaAs) FRAMs
- Analog Memories
- Magneto Resistive Random Access Memories (MRAMs)
- Experimental Memory Devices
Unit 6 Advancement in Memory Technology
- Memory Hybrids (2D & 3D)
- Memory Stacks
- Memory Testing and Reliability Issues
- Memory Cards
- High Density Memory Packaging
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