Unit 1 Power Electronics – An Introduction

• Electrical Energy: Characteristics and Storage – Need for Energy Conversion and Power Processing Power Electronics: Need and Role in Energy Conversion – History – Power Electronics System – Its Building Blocks and Components – Linear Electronics versus Power Electronics – Interdisciplinary Nature of Power Electronics – Power Electronics Applications Power Electronics Switch – Ideal and Practical Switch Characteristics – Losses in Practical Switch – Concept of Safe Operating Area (SOA) – Specifications – Semiconductor Materials Used – Classification and Comparison of Power Switches Pulse Width Modulation – Principle and Concept – Duty Cycle – Digital Nature of PWM and Control of Power Devices by PWM 6 Subject Code: 3142409 w.e.f

Unit 2 Uncontrolled Devices

6 lecture hours

• Power Semiconductor Diodes Basic Structure – VI Characteristics-Switching Characteristics – Specifications & Ratings – Reverse Recovery Characteristics – Classification – Application of Power Diodes Construction
• Characteristics and Applications of Various Diodes like General Purpose Diode – Schottky Diode – Fast Recovery Diode – Zener Diode – Comparison Between General Power Diode and Power Diode – Switching Characteristics of Diode – Series and Parallel Operation of Diode

Unit 3 Semi Controlled Devices

6 lecture hours

• Thyristors Introduction – VI Characteristics – Construction – The Two Transistor Model – Turn ON Methods – Switching Characteristics – Gate Characteristics – SOA – Ratings – Protection – Series and Parallel Operation – Gate Drive Circuits-Types – Construction
• Characteristics and Applications of Various Types of Thyristors Like SCR, DIAC
• LASCR, RCT, MCT, SITH, GTO, PUT, IGCT, etc
• Thyristor Commutation – Requirement of Commutation – Types: Class A, Class B, Class C, Class D, Class E & Class F

Unit 4 Fully Controlled Devices

• Power Bipolar Junction Transistors Construction: Vertical Power Transistor Structure – Physics of Operation – VI Characteristics – Switching Characteristics – Breakdown in Transistors (Primary and Secondary) – Difference Between Signal and Power BJT – Losses – SOA – Ratings – Specifications – Basic Driving Circuits – Soft and Hard Switching of Transistor – Protection Circuits – Driver Circuits – Applications like Power Darlington
• Power Supplies
• Power Switch
• etc. – Series and Parallel Operation of Power BJT Power FETs: Field Effect Transistor – Principle – The Field Effect – Construction and Operation – VI Characteristics – Gate Control – Applications – Ratings – Specifications Power MOSFET – Types – Construction – Difference – Equivalent Circuit – VI Characteristics – Physics of Operation – Gate Control – Field Effect – Switching Characteristics – Limitations – Losses – SOA – Ratings and Specifications – Protection – 12 Subject Code: 3142409 w.e.f
• AY 2018-19 Gate Drive Circuits – Applications – Parallel Operation of MOSFETs – Comparison between Power MOSFET and Power BJT Introduction to WBG (SiC/GaN) MOSFETs and its Comparison with Si MOSFETs – Advantages – Drawbacks – Applications IGBT: Basic Structure – Operation – VI Characteristics – Switching Characteristics – Gate Drive requirement – SOA – Gate Driver Circuit – IGBT Protection – Ratings and Application – Series and Parallel Operation

Unit 5 Basic Power Electronics Circuits

4 lecture hours

• Introduction to Power Electronics Converters – Classification – Basic Principle of Operation – AC-DC Converters (Rectifiers) – DC-DC Converters – DC-AC Converters (Inverters) – AC-AC Converters – Applications

Unit 6 Protection of Power Devices and Circuits

6 lecture hours

• Protection of Semiconductor Power Switches – Basics of Thermal Requirements and Protection (dv/dt and di/dt Protection – Snubber Circuits – OV and OC Protections) – Concept of EMI (With Reference to False Triggering of Power Switches) – EMI Shielding