Principles of Power Electronics
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Follow on Instagram for UpdatesPrinciples of Power Electronics Syllabus — Unit-wise Content
The official GTU curriculum for Principles of Power Electronics (subject code 2132404) as prescribed for PE · Semester 3 divides the course into 6 units, covering 20 listed topics. The unit-wise breakdown below is read from the GTU syllabus document for this subject code, so you can check what the course actually covers before deciding which papers to attempt.
Download the official syllabus PDF (2132404)Unit 1 Power Electronics – An Introduction
- Electrical Energy: Characteristics And Storage – Need For Energy Conversion and Power Processing Power Electronics: Need and Role – History – Power Electronics System – Its Building Blocks and Components – Various Applications – Linear Electronics versus Power Electronics – Interdisciplinary Nature of Power Electronics Power Electronics Switch – Ideal and Practical Switch Characteristics – Losses in Practical Switch – Concept of Safe Operating Area (SOA) – Specifications – Semiconductor Materials Used – Classification and Comparison of Power Switches
Unit 2 Diodes
- The Semiconductor Diode – VI Characteristics – Specifications & Ratings – Classification Construction
- Characteristics and Applications of Various Diodes like General Purpose Diode
- Zener Diode
- Tunnel Diode
- Varactor Diode, LED, Photo Diode
- Power Diode
- Fast Recovery Diode
- Schottky Diode, etc
- Switching Characteristics of Diode – Series and Parallel Operation
Unit 3 Transistors
- BJT – Construction – Types: NPN & PNP – Principle – Working – Current Components in NPN & PNP Transistor – Drive Requirement – Transistor as an Amplifier – CB, CE and CC Configurations & Their Comparison – Current Gain – Input and Output Characteristics – Cut-Off
- Active and Saturation Regions – Transistor as a Switch Transistor Low Frequency Response – Small Signal Model – Two Port Devices and The Hybrid Model – Transistor h-Model – The h-Parameters DC and AC Load Line – Q-Point – Drive Requirement – Driving Circuits – Protection – Applications
Unit 4 Power BJT
- Difference Between Signal and Power BJT – Construction Vertical Power Transistor Structure – Physics of Operation – VI Characteristics – Switching Characteristics – Breakdown in Transistors (Primary and Secondary) Losses – SOA – Ratings – Specifications – Driving Circuits – Soft and Hard Switching of Transistor – Protection Circuits – Applications Like Power Darlington
- Power Supplies
- Power Switch, etc
Unit 5 Thyristors
- Introduction – VI Characteristics – Construction – The Two Transistor Model – Turn ON Methods – Switching Characteristics – Gate Characteristics – SOA – Ratings – Protection – Series and Parallel Operation Gate Drive Circuits Types – Construction
- Characteristics and Applications of Various Types of Thyristors Like SCR, DIAC
- LASCR, RCT, MCT, SITH, GTO, PUT, UJT, IGCT, etc
- Thyristor Commutation – Requirement of Commutation – Types: Class A, Class B, Class C, Class D, Class E & Class F
Unit 6 FET & MOSFET
- Field Effect Transistor – Principle – The Field Effect – Construction and Operation – VI Characteristics – Gate Control – Applications – Ratings – Specifications MOSFET – Construction – Principle And Working – Ratings And Specifications Power MOSFET – Construction – Difference – Equivalent Circuit – VI Characteristics – Physics of Operation – Gate Control – Field Effect – Switching Characteristics – Limitations – SOA – Ratings and Specifications – Protection – Applications – Paralleling Of MOSFETs Gate Drive Circuits
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